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| VDSS ID25 RDS(on) Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 7P50 IXTH 8P50 -500V -7 A 1.5 -500V -8 A 1.2 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJ TC = 25C TC = 25C TC = 25C 7P50 8P50 7P50 8P50 7P50 8P50 Maximum Ratings -500 -500 20 30 -7 -8 -28 -32 -7 -8 30 180 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ W C C C C Nm/lb.in. g TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Features *International standard package *Low R HDMOS process *Rugged polysilicon gate cell structure *Unclamped Inductive Switching (UIS) TM DS (on) JEDEC TO-247 AD Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13/10 6 *Low package inductance (<5 nH) - easy to drive and to protect rated Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. -500 0.054 -3.0 -0.122 100 TJ = 25C TJ = 125C -200 -1 -5.0 V %/K V %/K nA A mA Applications VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = -250 A BVDSS Temperature Coefficient V DS = VGS, ID = -250 A VGS(th) Temperature Coefficient V GS = 20 VDC, VDS = 0 V DS = 0.8 VDSS V GS = 0 V V GS = -10 V, ID = 0.5 ID25 * High side switching * Push-pull amplifiers * DC choppers * Automatic test equipment Advantages * Easy to mount with 1 screw * Space savings * High power density (isolated mounting screw hole) 7P50 8P50 RDS(on) Temperature Coefficient 1.5 1.2 0.6 %/K (c) 2001 IXYS All rights reserved 94534E (6/01) IXTH 7P50 IXTH 8P50 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 4 5 3400 V GS = 0 V, VDS = -25 V, f = 1 MHz 450 175 33 V GS = -10 V, VDS = 0.5 VDSS ID = 0.5 ID25 RG = 4.7 (External) 27 35 35 130 V GS = -10 V, VDS = 0.5 VDSS ID = 0.5 ID25 32 64 0.7 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain 1 2 3 TO-247 AD Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS V DS = -10 V; ID = ID25, pulse test Dim. Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions V GS = 0 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 7P50 8P50 7P50 8P50 -7 -8 -28 -32 -3 400 A A A A V ns Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, di/dt = 100 A/s IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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